Research

Hans Joachim Queisser is an experimental semiconductor physicist, now retired. He established - with W. Shockley - the correct thermodynamic limit of efficiency for junction solar cells. At UC Berkeley, he achieved the first transmission electron microscopy of silicon single crystals. At Bell Laboratories, he invented a highly efficient infrared luminescence diode. At the Max-Planck-Institute for Solids in Stuttgart his research concerned semiconducting materials, especially silicon and its perfection, also gallium arsenide, optoelectronics, and the physcis of crytsal defects and solar cells.

Career

• 1998 Professor emeritus        
• 1970 Founding Director of the Max Planck Institute for Solid State Research, Stuttgart, Germany
• 1966 Professor for Physics, University of Frankfurt / Main, Germany
• 1965 Bell Laboratories, Murray Hill, USA
• 1959 Shockley Transistor Corporation in Mountain View, California, USA
• 1958 Ph.D., University of Göttingen, Germany
• 1951/1952 Scholarship, University of Kansas, USA

Functions

• 1976-1977 President of the German Physcial Society

Honours and Memberships

• since 2012 Honorary Fellow of the Japan Society of Applied Physics
• since 1994 Member of the German National Academy of Sciences Leopoldina
• 1976-1977 Member of the Berlin-Brandenburg Academy of Sciences and Humanities (since 1990 ordinary Member)