Prof. Dr. Hongjun Gao
- Section Physics
- Location Beijing, China
- Election year 2021
Research
Research Priorities: Condensed matter Physics, quantum nanostructures, scanning tunneling microscopy/spectroscopy, low-dimensional materials
Hongjun Gao is a Chinese physicist and has made significant contributions in construction and physical properties of quantum nanostructures and scanning tunneling microscopy/ spectroscopy.
Hongjun Gao’s research work focusses mainly on the construction of functional quantum structures, self-assembly mechanism, and potential applications in future functional nanodevices. During the last decades, Hongjun Gao’s research group has been exploring how to control quantum states of matter at a single molecule, atom, and electron level – one of the most important and challenging research fields in condensed matter physics.
He has been working on these projects using ultra-high vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) together with the molecular beam epitaxial (MBE) technique and ab initio calculations, from imaging, understanding, controlling, to functionalizing of the quantum structures at a single atom or molecular scale.
Hongjun Gao's most important scientific results include the observation of Majorana zero mode (MZM) and conductance plateau in an iron-based superconductor as well as the understanding of nanostructure formation on metal surfaces and their transport properties, which is crucial for the formation of functional nanodevices.
In addition, he investigates the growth of large scale, high quality graphene on Ruthenium (Ru(0001)) surfaces and Silicon (Si)-layer intercalation for future nanodevices. Furthermore, he researches the construction and physical property of novel two-dimensional atomic crystals beyond Graphene.
Hongjun Gao is a Chinese physicist and has made significant contributions in construction and physical properties of quantum nanostructures and scanning tunneling microscopy/ spectroscopy.
Hongjun Gao’s research work focusses mainly on the construction of functional quantum structures, self-assembly mechanism, and potential applications in future functional nanodevices. During the last decades, Hongjun Gao’s research group has been exploring how to control quantum states of matter at a single molecule, atom, and electron level – one of the most important and challenging research fields in condensed matter physics.
He has been working on these projects using ultra-high vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) together with the molecular beam epitaxial (MBE) technique and ab initio calculations, from imaging, understanding, controlling, to functionalizing of the quantum structures at a single atom or molecular scale.
Hongjun Gao's most important scientific results include the observation of Majorana zero mode (MZM) and conductance plateau in an iron-based superconductor as well as the understanding of nanostructure formation on metal surfaces and their transport properties, which is crucial for the formation of functional nanodevices.
In addition, he investigates the growth of large scale, high quality graphene on Ruthenium (Ru(0001)) surfaces and Silicon (Si)-layer intercalation for future nanodevices. Furthermore, he researches the construction and physical property of novel two-dimensional atomic crystals beyond Graphene.
Career
- since 2000 Professor and Group Leader, Institute of Physics, Chinese Academy of Sciences (CAS), China
- 1997-1999 Guest Scientist, Oak Ridge National Laboratory, Oak Ridge, USA
- since 1995 Professor, Beijing Laboratory of Vacuum Physics, CAS, China
- 1994-1995 Associate Professor, Beijing Laboratory of Vacuum Physics, CAS, China
- 1994 PhD in Physics, Peking University, Beijing, China
Functions
- 2011 Deputy Secretary-General, CAS, China
- since 2011 Dean, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- 2010-2018 Associate Editor, Applied Physics Letters
- 2004-2007 Scientific Secretary, International Union of Vacuum Science, Technology and Applications