Prof. Dr. Hans-Joachim Queisser (✝︎)
- Fachbereich Physik
- Ort Stuttgart, Deutschland
- Wahljahr 1994
Forschung
Hans Joachim Queisser was an experimental semiconductor physicist, now retired. He established - with W. Shockley - the correct thermodynamic limit of efficiency for junction solar cells. At UC Berkeley, he achieved the first transmission electron microscopy of silicon single crystals. At Bell Laboratories, he invented a highly efficient infrared luminescence diode. At the Max-Planck-Institute for Solids in Stuttgart his research concerned semiconducting materials, especially silicon and its perfection, also gallium arsenide, optoelectronics, and the physcis of crytsal defects and solar cells.